▎ 摘　　要

NOVELTY - Preparation of graphene-based transparent conductive film by high-temperature processing comprises cleaning quartz sheet, drying, surface oxidizing, dispersing 1-2 mg/mL oxidized graphene and 0.1-0.4 mg/mL hydrogen iodide solution in 30 mL water at 60-80 degrees C for 5-15 minutes, drawing quartz wafer in dispersion, heating at 85 degrees C for 12-24 hours, feeding to high-temperature furnace, filling with hydrogen, and heating at 1500 degrees C for 30 minutes. USE - Method for preparing graphene-based transparent conductive film by high-temperature processing. ADVANTAGE - The method is simple and has high yield. The film has controllable size, uniform distribution, improved stability and increased electrical conductivity.