▎ 摘　　要

NOVELTY - The device (100) has a lower metal layer (110) formed on a surface of a dielectric layer (101). A semiconductor material layer (120) is formed on a surface of the metal layer. A conductive filament layer (130) is arranged on one of surfaces of the material layer. An upper metal layer is provided on a filament layer, where the material layer comprises graphene, two-dimensional transition metal dichalcogenide, hexagonal boron nitride and black phosphorus, the filament layer comprises hafnium oxide, silicon dioxide, silicon nitride, aluminum oxide, titanium oxide, zirconium dioxide and zinc oxide, and the metal layer comprises gold, copper, nickel and titanium. USE - Semiconductor device. ADVANTAGE - The device improves performance of a transistor and electrical characteristics by lowering contact resistance, and effectively increases current conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a side cross-sectional view of a semiconductor device. Semiconductor device (100) Dielectric layer (101) Lower metal layer (110) Semiconductor material layers (120, 124) Conductive filament layer (130)