▎ 摘　　要

NOVELTY - The method involves forming a first dielectric layer over a rear surface of a substrate (116). A graphene layer is formed over a front surface of the substrate after forming the first dielectric layer. The first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the rear surface of the substrate after forming the graphene layer. An etching process is performed to the rear surface of the substrate to form a pellicle including a pellicle membrane that includes the graphene layer while using the patterned first dielectric layer as a mask (108). A second dielectric layer is formed over the front surface of the substrate prior to forming the graphene layer over the front surface of the substrate. USE - Method for fabricating a pellicle in a semiconductor industry. ADVANTAGE - The method enables scaling down semiconductor integrated circuits (IC) dimensions, so that production efficiency can be improved, thus lowering associated costs. The method enables adding superior strength to thermal properties, so that mitigate stress in an effective manner. The method enables providing strong and reliable pellicle membranes, thus improving pellicle service lifetime and utilization. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a structure for fabricating a pellicle in a semiconductor industry. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a lithography system. Extreme UV lithography system (100) Illuminator (104) Mask stage (106) Mask (108) Substrate (116)