▎ 摘　　要

NOVELTY - Preparing thick flake graphite alkene involves preparing the thick graphene by intercalating crystalline flake graphite through oxide, filtering, washing, and drying to prepare intercalated graphite, the intercalation graphite by different method for expansion peeling to obtain black thick graphene solid powder, preparing intercalation graphite, the oxidant used in the oxidation intercalation process is one or more of sodium persulfate, sodium nitrate, potassium permanganate, potassium dichromate, concentrated nitric acid, hydrogen peroxide, perchloric acid, the intercalating agent is one or more of sodium dodecyl sulfate, hexadecyl ammonium bromide, phosphoric acid, perchloric acid, sulfuric acid, boric acid, copper chloride, the reaction temperature is controlled at 15- 50 ℃, the reaction temperature is controlled at 20-40 ℃, the reaction time is controlled between 20-120min in the process of preparing thick sheet graphene. USE - Method for preparing thick flake graphite alkene. ADVANTAGE - The method provides thick flake graphene with good reinforcing and toughening effect, is simple, the device requirement is low, the raw material is easy to obtain, and the graphene with high performance can be prepared in large scale and high efficiency. DETAILED DESCRIPTION - Preparing thick flake graphite alkene involves preparing the thick graphene by intercalating crystalline flake graphite through oxide, filtering, washing, and drying to prepare intercalated graphite, the intercalation graphite by different method for expansion peeling to obtain black thick graphene solid powder, preparing intercalation graphite, the oxidant used in the oxidation intercalation process is one or more of sodium persulfate, sodium nitrate, potassium permanganate, potassium dichromate, concentrated nitric acid, hydrogen peroxide, perchloric acid, the intercalating agent is one or more of sodium dodecyl sulfate, hexadecyl ammonium bromide, phosphoric acid, perchloric acid, sulfuric acid, boric acid, copper chloride, the reaction temperature is controlled at 15- 50 ℃, the reaction temperature is controlled at 20-40 ℃, the reaction time is controlled between 20-120min in the process of preparing thick sheet graphene, the low temperature stage needs to control the system temperature below 15 ℃ in the diluting process, the control temperature is lower than 30 degrees centigrade, the expansion stripping process in the expansion stripping process is microwave expansion stripping or high temperature expansion stripping, the high temperature expansion temperature is 300-600℃.