• 专利标题:   Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.
  • 专利号:   WO2022182094-A1, KR2022121551-A, KR2482650-B1
  • 发明人:   CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K
  • 专利权人:   FINE SEMITECH CORP, FST CO LTD
  • 国际专利分类:   C01B021/064, G03F001/22, G03F001/62
  • 专利详细信息:   WO2022182094-A1 01 Sep 2022 G03F-001/62 202282 Pages: 21
  • 申请详细信息:   WO2022182094-A1 WOKR002571 22 Feb 2022
  • 优先权号:   KR025772

▎ 摘  要

NOVELTY - Pellicle film comprises a boron nitride nanostructure layer. USE - The pellicle film is used for extreme UV lithography. ADVANTAGE - The pellicle film has high thermal stability, high strength, thermo-mechanical property, production yield, and deflection by vacuum, and is very resistant to active hydrogen. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing the pellicle film, which involves forming a support layer on a substrate, and forming a boron nitride nanostructure layer on the support layer.