• 专利标题:   Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.
  • 专利号:   CN106904599-A, CN106904599-B
  • 发明人:   DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/186, H01L021/02
  • 专利详细信息:   CN106904599-A 30 Jun 2017 C01B-032/186 201758 Pages: 10 Chinese
  • 申请详细信息:   CN106904599-A CN10952653 17 Dec 2015
  • 优先权号:   CN10952653

▎ 摘  要

NOVELTY - The preparation method of patterned graphene involves providing insulating substrate, depositing germanium film on the insulating substrate, etching desired pattern in the germanium film using photolithographic etching process, forming patterned germanium film and then processing at high temperature, continuously evaporating at high temperature, and processing. USE - The method is useful for preparation of patterned graphene (claimed). ADVANTAGE - The method enables preparation of patterned graphene with high quality.