▎ 摘　　要

NOVELTY - The method involves bringing a metal substrate into contact with a nonmetal element. The nonmetal element adsorbed is heat-treated to the surface of the metal substrate, the nonmetal element dissolved in the surface of the metal substrate and/or the metal compound reacted with the nonmetal element, when the nonmetal element adsorbed to the surface of the metal substrate, the nonmetal element dissolved in the surface of the metal substrate and/or the nonmetal element formed by reduction of the metal compound is dissolved into an interior of the metal substrate. A graphene precursor is subjected to chemical vapor deposition on the metal substrate containing the nonmetal element dissolved, when manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. The nonmetal element includes selected from among sulfur (S), selenium (Se), tellurium (Te), oxygen (O), boron (B), phosphorous (P), and nitrogen (N). USE - Method for manufacturing multilayer graphene (claimed) using chemical vapor deposition. ADVANTAGE - The stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene are controlled by regulating graphene growth and doping during the synthesis procedure without additional processing. The bandgap of graphene is controllable and the synthesized graphene has a Bernal stacking structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a multilayer graphene. DESCRIPTION OF DRAWING(S) - The drawings show the cross-sectional views of transmission electron microscope (TEM) image of the multilayer graphene manufactured.