• 专利标题:   Method for preparation of graphene/inorganic semiconductor composite thin film for electrode for e.g. sensor, involves using impregnation-pulling and self-assembling methods for preparing graphene, and obtaining precursor anion.
  • 专利号:   CN103021574-A, CN103021574-B
  • 发明人:   LIU J, HE G, WANG J, WU X, HUANG S, DAN X
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   H01B013/00, H01B005/14
  • 专利详细信息:   CN103021574-A 03 Apr 2013 H01B-013/00 201381 Pages: 12 Chinese
  • 申请详细信息:   CN103021574-A CN10580905 27 Dec 2012
  • 优先权号:   CN10580905

▎ 摘  要

NOVELTY - The method involves providing a graphene solution and inorganic semiconductor precursor. A sol-gel method or hydro-thermal synthesis method is used for preparing graphene/semiconductor or composite gel. Spin coating, vapor deposition, spray coating, impregnation-pulling and self-assembling methods are used for preparing graphene on a surface of a substrate/inorganic semiconductor composite film. An inorganic semiconductor precursor anion e.g. chromium, sulfate, nitrate, acetate, hydroxide, hydrogen sulfide, hydrogen phosphate, and hydrogen carbonate, is obtained. USE - Method for preparation of a graphene/inorganic semiconductor composite thin film for an electrode (claimed). Uses include but are not limited to a solar energy battery, sensor, organic LED (OLED), touch screen and photo-electric field. ADVANTAGE - The method enables preparing the uniform film using a functional group on a surface of the grapene to form a hydrogen bond, an ionic bond, a covalent bond, and inorganic semiconductor to improve dispersibility of a graphene sheet. The method enables reducing surface defects of the graphene, increasing conductivity and uniformity of the grapheme and improving interface geometry formed by the graphene and semiconductor nanometer particles. The method enables energy level matching, expands application range of the thin film. DETAILED DESCRIPTION - The graphene on the surface contains hydroxyl group, carboxyl group, epoxy group, carbonyl group of graphene oxide, reducing graphene oxide, and reducing agent e.g. hydrazine, hydrazine hydrate, sodium boron hydride, vitamin C, ethylenediamine, and ammonia water. The film contains a base material such as glass, quartz, conductive glass, ceramic material, polyethylene terephthalate (PET) film, polymethyl methacrylate (PMMA) film, polyester film or nylon film. An INDEPENDENT CLIM is also included for a graphene/inorganic semiconductor composite thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene/inorganic semiconductor composite thin film.