▎ 摘　　要

NOVELTY - The method involves providing a semiconductor substrate (1). A gate electrode is formed on the semiconductor substrate. A gate dielectric layer is formed by depositing a high-k dielectric constant of gate dielectric material. The gate dielectric layer is etched to form the needed pattern. The portion of gate electrode is exposed. A graphene (3) is etched to form preset pattern. The portion of gate electrode is exposed out to form source and drain electrodes (5,6). USE - Method for manufacturing graphene alkenyl electronic field-effect device e.g. CMOS device, and large-scale carbon-based integrated circuit. ADVANTAGE - The device can be manufactured simply. The performance of field-effect device can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the process for manufacturing graphene alkenyl electronic field-effect device. Semiconductor substrate (1) Double grid electrode (2) Graphene (3) Source electrode (5) Drain electrode (6)