▎ 摘　　要

NOVELTY - A semiconductor device has a catalyst metal film (2a) on a substrate, graphene (4a) provided on catalyst metal film, interlayer insulation film (9a) provided on graphene, and carbon nanotube (7a) provided in contact hole (5a) penetrating the insulation film. The catalyst metal film is processed with plasma of gas chosen from hydrogen, nitrogen, ammonia and/or noble gas, before or after forming carbon nanotube. USE - Semiconductor device e.g. large-scale integrated circuit and 3D-memory. ADVANTAGE - The semiconductor device is manufactured by simple method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of semiconductor device, which involves forming catalyst metal layer on substrate, forming graphene, forming interlayer insulation film and contact hole, removing graphene in contact hole, processing catalyst metal layer with plasma of gas chosen from hydrogen, nitrogen, ammonia and noble gas, forming carbon nanotube, embedding, planarizing and forming upper wiring layer on insulation film. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of semiconductor device. Electroconductive film (2a) Catalyst metal film (3a) Graphene (4a) Contact hole (5a) Carbon nanotube (7a) Embedding film (8a) Interlayer insulation film (9a)