▎ 摘　　要

NOVELTY - Production of doped graphene pattern involves supplying a n-type carbon precursor on a substrate, forming an amorphous carbon pattern by irradiating electron beam or ion beam to carbon precursor, and heat-treating the amorphous carbon pattern. USE - Production of doped graphene pattern during manufacture of pn-diode (claimed). ADVANTAGE - The method economically forms doped graphene pattern. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of pn-diode.