• 专利标题:   Depositing polystyrene microspheres by selecting substrate for polystyrene microsphere deposition, placing substrate on substrate in reaction chamber of atomic layer deposition instrument, vaporizing diethyl zinc, ultrasonically dispersing and soaking substrate in polystyrene microsphere suspension.
  • 专利号:   CN115896743-A
  • 发明人:   GENG Z, PU J, CAO Q, DU J, XU X, ZHANG H, GUAN C
  • 专利权人:   UNIV NORTHWESTERN POLYTECHNICAL NINGBO
  • 国际专利分类:   C08J007/04, C08J007/06, C23C016/40, C23C016/455, D06M101/28, D06M101/40, D06M011/44, D06M015/233
  • 专利详细信息:   CN115896743-A 04 Apr 2023 C23C-016/40 202336 Chinese
  • 申请详细信息:   CN115896743-A CN11336560 28 Oct 2022
  • 优先权号:   CN11336560

▎ 摘  要

NOVELTY - Method for depositing polystyrene microspheres, involves (a) selecting a substrate for polystyrene microsphere deposition, (b) placing the substrate on the substrate in a reaction chamber of an atomic layer deposition instrument, closing the cabin, evacuating the reaction chamber to make the cabin, and setting the gas flow and temperature, (c) vaporizing diethyl zinc, depositing the diethyl zinc precursor through the reaction chamber, and stopping the introduction of the diethyl zinc vapor precursor, (c) dispersing the polystyrene microsphere dispersion in deionized water, and ultrasonically dispersing, and (d) vertically fixing the substrate on the side wall of the container with polyimide tape, pouring the polystyrene microsphere suspension into the polystyrene microsphere suspension, soaking the substrate in the polystyrene microsphere suspension, and leaving still until the solvent evaporates to dryness to obtain a substrate for depositing polystyrene microspheres. USE - The method is useful for depositing polystyrene microspheres. ADVANTAGE - The method enables depositing atomic layer deposition and vertical deposition to realize uniform deposition of polystyrene micro-sphere on multiple substrates. DETAILED DESCRIPTION - Method for depositing polystyrene microspheres, involves (a) selecting a substrate for polystyrene microsphere deposition, (b) placing the substrate on the substrate in a reaction chamber of an atomic layer deposition instrument, closing the cabin, evacuating the reaction chamber to make the cabin, where pipelines reach a vacuum state, and setting the gas flow and temperature, (c) vaporizing diethyl zinc, depositing the diethyl zinc precursor through the reaction chamber, stopping the introduction of the diethyl zinc vapor precursor, introducing nitrogen purge gas, passing the precursor obtained by water vaporization into the reaction chamber for deposition, stopping feeding the water vaporization precursor, passing in nitrogen purge gas again, and repeating the above cycle until a zinc oxide film formed on the carbon cloth, (c) dispersing the polystyrene microsphere dispersion in deionized water, ultrasonically dispersing under conditions to obtain a dispersed polystyrene microsphere suspension, and (d) vertically fixing the substrate on the side wall of the container with polyimide tape, pouring the polystyrene microsphere suspension into the polystyrene microsphere suspension again, soaking the substrate in the polystyrene microsphere suspension, leaving still in a constant temperature oven, and leaving still until the solvent evaporates to dryness to obtain a substrate for depositing polystyrene microspheres.