1. 平台首页
  2. 国际专利信息
  • 专利标题:   Preparation of patterned graphene comprises forming photoresist layer on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing.
  • 专利号:   CN105948023-A, CN105948023-B
  • 发明人:   JIN Z, PENG S, ZHANG D, SHI J
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN105948023-A 21 Sep 2016 C01B-031/04 201676 Pages: 10 Chinese
  • 申请详细信息:   CN105948023-A CN10270900 27 Apr 2016
  • 优先权号:   CN10270900

▎ 摘　　要

NOVELTY - Preparation of patterned graphene comprises forming photoresist layer having hollow structure on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing. USE - Method for preparing patterned graphene (claimed). ADVANTAGE - The method is simple with no pollution.