• 专利标题:   Formation of single layer nitrogen-doped graphene in plasma-assisted catalytic surface reaction for e.g. electronics, involves depositing nickel film on substrate, plasma-treating nickel film, and growing nitrogen-doped graphene on nickel.
  • 专利号:   WO2021133158-A1
  • 发明人:   MOHAMMAD HANIFF M A, ZAINAL ARIFIN N H, SYONO M I
  • 专利权人:   MIMOS BERHAD
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26
  • 专利详细信息:   WO2021133158-A1 01 Jul 2021 C01B-032/186 202159 Pages: 21 English
  • 申请详细信息:   WO2021133158-A1 WOMY050128 29 Oct 2020
  • 优先权号:   MY007693

▎ 摘  要

NOVELTY - Formation of single layer nitrogen-doped graphene in a plasma-assisted catalytic surface reaction involves (110) depositing nickel film on a substrate, (120) plasma-treating the nickel film, and (130) growing the single layer nitrogen-doped graphene on the plasma treated nickel film using a mixture of chemical compounds in the plasma-assisted catalytic surface reaction. USE - Formation of single layer nitrogen-doped graphene used for electronics, sensor and electronic packaging. ADVANTAGE - The method is efficient, economical, and environmentally-friendly, and provides nitrogen-doped graphene under mild conditions. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart for formation of single layer nitrogen-doped graphene. Deposition process (110) Plasma treating process (120) Plasma assisted catalytic surface reaction (130)