▎ 摘　　要

NOVELTY - An epitaxial graphene preparing method involves putting the silicon carbide substrate in the furnace cavity, passing hydrogen gas into the furnace cavity, performing hydrogen etching, and evacuating the furnace cavity with the vacuum degree not higher than 5 asterisk 10-5Pa, performing an oxidation treatment on the silicon carbide substrate after hydrogen etching by passing in oxygen and argon under the conditions of oxygen flow rate of 5-50sccm, argon flow rate of 700-800sccm, cavity pressure of 500-900mbar, temperature of 800-1300 degrees C and oxidation treatment time of 15-120 minutes, after the oxidation treatment, evacuating the furnace cavity with the vacuum degree of not higher than 5 asterisk 10-5Pa. The graphene is grown on the silicon carbide substrate after the pre-treatment to a temperature of 1450-1700 degrees C in an inert atmosphere, after completing the growth, lowered the temperature to room temperature to obtain the desired product. USE - Method for preparing epitaxial graphene. ADVANTAGE - The method enables preparing the epitaxial graphene with effectively reducing the nucleation density of the silicon carbide substrate epitaxially growing graphene so as to obtain large size, and better performance of the graphene material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene device.