▎ 摘　　要

NOVELTY - The device has a Dirac patterned semi-metal layer (1), an intermediate dielectric layer (2) and a base metal reflector plate (3) attached to each other. A center of four digging semicircle devices are located on a symmetrical position of the Dirac semi-metal material. The Dirac patterned semi-metal layer is made of low dielectric constant material. The Dirac patterned semi-metal layer is used to realize absorbing function in different frequency band. USE - Adjustable terahertz based graphene semi-metal absorbing device. ADVANTAGE - The device has simple structure, convenient to process, realizes dynamic performance of the absorbing device with adjustable resonance frequency, and satisfies the requirement of application terahertz absorbing aspect. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an adjustable terahertz based graphene semi-metal absorbing device. Dirac patterned semi-metal layer (1) Intermediate dielectric layer (2) Base metal reflector plate (3)