▎ 摘　　要

NOVELTY - The modulator has a silicon waveguide transmission layer (2) formed on a sapphire substrate (1), and provided with a graphene layer (3) and a chalcogenide strip waveguide (4). The graphene layer is located on an upper surface or a lower surface of the chalcogenide strip waveguide, which is formed on the sapphire substrate for covering the silicon waveguide transmission layer, the graphene layer and the chalcogenide strip waveguide. The silicon waveguide transmission layer and the chalcogenide strip waveguide are connected to form a mixed ridge waveguide. USE - Hybrid waveguide integrated graphene infrared all-optical modulator for use in a light intensity modulation device. ADVANTAGE - The modulator adopts a sapphire-silicon-chalcogenide material mixed waveguide structure based on mid-infrared low loss and flexible integrated graphene to enhance interaction of light and substance, and utilizes ultra-fast saturable absorption effect of graphene to improve modulation speed of the modulator in current 3-5 m wave band, thus reducing modulation power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a hybrid waveguide integrated graphene infrared all-optical modulator. 1Sapphire substrate 2Silicon waveguide transmission layer 3Graphene layer 4Chalcogenide strip waveguide 6Chalcogenide cover layer