▎ 摘　　要

NOVELTY - Preparing array vertical graphene field emission cold cathode comprises (i) depositing a metal conductive layer on the silicon substrate; (ii) adhering an AAO template on the metal conductive layer; (iii) depositing a metal catalytic lattice on the exposed surface of the metal conductive layer; and (iv) removing AAO template, using chemical vapor deposition (CVD) technology to grow vertical graphene array on the metal catalytic lattice to obtain array vertical graphene field emitting cold cathode. The metal of the metal conductive film in the step (i) is molybdenum. The metal of the metal catalytic lattice is nickel or copper. USE - The array vertical graphene field emission cold cathode is useful in electronic material preparation technology field and in emission device integration field. ADVANTAGE - The method: is simple, and can be prepared in large area, obtains array vertical graphene field emission cold cathode opening electric field is low, small field shielding effect, large current density, high emitting stability, controls power, pressure, prevents growth rate too fast, and grows relatively independent vertical graphene on the metal catalytic lattice, which can reduce the field shielding effects of the cathode surface, increase the total emission current, and improve the stability of the electron emission.