▎ 摘　　要

NOVELTY - Restoring properties of graphene, comprises grounding the graphene, and exposing the graphene to plasma having a density of 0.3-30x 108 cm-3. USE - The method is useful for restoring properties (including a charge neutrality point, a doping state, carriers and conductivity) of graphene (all claimed) for silicon treatment of graphene. ADVANTAGE - The method rapidly restores the properties of the graphene at low-temperature with improved stability and desired electrical/mechanical/chemical characteristics in an eco-friendly manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus comprising an electrode chuck in a treatment container in a ground state, a plasma electrode configured to generate plasma in the treatment container, and a plasma power source configured to supply power to the plasma electrode, where the electrode chuck is configured to support the graphene and the plasma electrode is configured to generate plasma. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an apparatus for restoring properties of graphene. Treatment container (110) Electrode chuck (120) Dielectric window (140) Inductively coupled plasma power source (160) Bias power source. (170)