• 专利标题:   Microwave reduction of graphene oxide film used in e.g. thin film transistor, involves placing graphene oxide film in single mode microwave magnetic field, and reducing graphene oxide film into graphene film.
  • 专利号:   CN106554007-A
  • 发明人:   WANG Z, HAN H, CHEN Y
  • 专利权人:   INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN106554007-A 05 Apr 2017 C01B-032/184 201732 Pages: 8 Chinese
  • 申请详细信息:   CN106554007-A CN10591328 16 Sep 2015
  • 优先权号:   CN10591328

▎ 摘  要

NOVELTY - The microwave reduction method of graphene oxide film involves placing a graphene oxide film in a single mode microwave magnetic field, and reducing the graphene oxide film into a graphene film. USE - Microwave reduction of graphene oxide film used in thin film transistor, flexible electronic device, and solar cell. ADVANTAGE - The environmentally-friendly method enables the microwave reduction of graphene oxide film in a short time at low cost, with high conductivity, and less energy, without using toxic chemical agents harmful to the human body.