▎ 摘　　要

NOVELTY - The utility model claims a high reliability epitaxial wafer and light emitting diode, comprising a substrate and an N-type semiconductor sequentially laminated on the substrate, a multi-quantum well layer, a high-conductivity layer and a P-type semiconductor layer, wherein: the high-conductivity layer comprises n groups sequentially conductance sub-layer stacked on the multi-quantum well layer, each group of the high-conductivity sub-layer comprises a sequentially-type AlGaN layer, a graphene layer and a P-type GaN layer, each group of the high-conductivity sub-layer in the P-type AlGaN layer is closest to the multi-quantum well layer. The high-reliability epitaxial wafer claimed by the utility model can improve the current expansion performance of the epitaxial wafer, reduce the working voltage, so as to improve the reliability and service life of the chip by the newly introduced high-conductivity conductive layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a light emitting diode.