• 专利标题:   Producing insulating high thermal conductivity graphene film comprises placing activated base film in vapour deposition chamber, taking diborane and disilane as precursor material and ammonia and nitrogen as carrier and introducing argon gas for deposition, carbonizing and graphitizing, and rolling.
  • 专利号:   CN114437673-A
  • 发明人:   ZHOU Z, ZHU Q, ZHENG Z
  • 专利权人:   DONGGUAN HONGYI THERMAL CONDUCTIVITY MAT
  • 国际专利分类:   C09K005/14, C23C016/02, C23C016/34, C23C016/56, H01B003/02, H01B003/30
  • 专利详细信息:   CN114437673-A 06 May 2022 C09K-005/14 202255 Chinese
  • 申请详细信息:   CN114437673-A CN10062691 19 Jan 2022
  • 优先权号:   CN10062691

▎ 摘  要

NOVELTY - Producing insulating high thermal conductivity graphene film, comprises (i) flattening a base film, soaking in a degreasing agent, stirring for 5-10 minutes, and placing in a activating liquid to activate for 30-60 minutes to obtain the activated base film; (ii) placing the activated base film in a vapour deposition chamber, taking diborane and disilane as precursor raw material, and ammonia and nitrogen as carrier, and introducing argon gas for deposition on activated base film surface at 800-1100degreesC for 20-30 minutes under pressure 8-15 Pa and cooling to obtain insulated base film; and (iii) carbonizing and graphitizing the insulated base film and rolling. USE - The method is useful for producing insulating high thermal conductivity graphene film. ADVANTAGE - The graphene film has thickness of 30-50 mum, and has good radiating effect and good insulating performance.