• 专利标题:   High temperature rapid quenching of highly conductive thin layer graphene comprises placing graphene in high temperature furnace, calcining, quickly quenching, boiling refrigerant so as to volatize it, and collecting thin layer of graphene.
  • 专利号:   CN105329888-A, CN105329888-B
  • 发明人:   HUANG X, LIAO Y, YANG C, CAI P
  • 专利权人:   CHINESE ACAD SCI URBAN ENVIRONMENT INST
  • 国际专利分类:   C01B031/04, C01B032/19
  • 专利详细信息:   CN105329888-A 17 Feb 2016 C01B-031/04 201630 Pages: 5 English
  • 申请详细信息:   CN105329888-A CN10899821 09 Dec 2015
  • 优先权号:   CN10899821

▎ 摘  要

NOVELTY - High temperature rapid quenching of highly conductive thin layer graphene comprises (i) placing graphene in a high temperature furnace, and calcining at 300-750 degrees C for 1-20 minutes; (ii) transferring the graphene into a refrigerant and quickly quenching; and (iii) boiling refrigerant under normal temperature and pressure conditions so as to volatize it, and collecting the thin layer of graphene. USE - The method is useful for high temperature rapid quenching of highly conductive thin layer graphene (claimed). ADVANTAGE - The method is easy to implement, requires low investment, has simple operation and low cost.