▎ 摘　　要

NOVELTY - The memristor comprises a transparent substrate (1), an oxidation graphene function layer (2), which is arranged on one side of the transparent substrate. The memristors electrode (3) is arranged opposite to the oxidation graphene functional layer on the other side. The transparent substrate is provided with a light-transmitting layer and an insulating layer. The memristor electrode is provided with multiple, a plurality of memristor electrodes are located on the same surface of the oxidation graphene function layer. USE - Graphene oxide nerve cell memristor. ADVANTAGE - The graphene oxide neuromemristor has excellent performance, regular structure and simple manufacturing, and is easy to control design memristor electric stimulation pulse sequence, capable of bearing a certain degree of bending to keep the memory resistance performance, more suitable for flexible electronic and wearable electronic technical field. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of graphene oxide neuromemristor. DESCRIPTION OF DRAWING(S) - The drawing shows a device structure and test wiring diagram of three-electrode graphene oxide plane memristor. 1Transparent substrate 2Oxidation graphene function layer 3Memristor electrode