▎ 摘　　要

NOVELTY - Transferring two-dimensional transition metal chalcogenide based on polyvinyl alcohol involves: (1) preparing polyvinyl alcohol solution for transferring by adding polyvinyl alcohol particles and glycerin to deionized water, and stirring to obtain a polyvinyl alcohol solution with 3-10 g/100 mL polyvinyl alcohol; (2) preparing a transfer sample; (3) producing polyvinyl alcohol film; (4) lifting polyvinyl alcohol film to separate metal chalcogenide from the growth substrate; (5) transferring the film adhered with two-dimensional material to target substrate; and (6) removing the film by removing the silicon wafer pressed on the target substrate, soaking the target substrate in deionized water to remove the film on the surface of the metal chalcogenide compound, then applying a hot blower to the target substrate or lightly blowing the surface with a nitrogen gun to remove water droplets on the surface of the target substrate. USE - The method is useful for transferring two-dimensional transition metal chalcogenide based on polyvinyl alcohol used for manufacturing homo/heterojunction (claimed). ADVANTAGE - The method: is suitable for any operation that requires two-dimensional material transfer, rapid, and simple in operation; ensures large transfer range; does not damage the growth substrate and the target substrate; adopts deionized water, which has very little contamination to the sample, and is beneficial to maintain the cleanliness of the sample; and realizes the production of homojunction and heterojunction. DETAILED DESCRIPTION - Transferring two-dimensional transition metal chalcogenide based on polyvinyl alcohol involves: (1) preparing polyvinyl alcohol solution by adding polyvinyl alcohol particles and 1-5 g/100 mL glycerin to deionized water, thoroughly stirring with a glass rod until the particles is completely dissolved in the water and the solution is clear without bubbles to obtain a polyvinyl alcohol solution with 3-10 g/100 mL polyvinyl alcohol; (2) preparing a transfer sample by blowing a surface of two-dimensional transition metal chalcogenide compound sample that needs to be transferred with a nitrogen gun to ensure that the surface of the sample is clean, determining the position of the metal chalcogenide compound on a growth substrate through an optical microscope, and determining a direction without growing the metal chalcogenide compound; (3) producing polyvinyl alcohol film by sucking the polyvinyl alcohol solution by using a plastic dropper, dripping on the growth substrate at the determined position of the metal chalcogenide compound, turning on constant temperature heating platform device, placing the growth substrate with polyvinyl alcohol solution on a glass slide, then placing on the heating platform, and heating at 60-80degrees Celsius for 5-10 minutes until the polyvinyl alcohol solution solidifies to form a film; (4) cooling the growth substrate to room temperature, using pointed tweezers to cut the edge of the film without growing the metal chalcogenide compound used as starting point for separation, then using flat tweezers to slowly tear up the film along the corner of the cut until the entire film is completely torn apart, adhering the metal chalcogenide compound to be transferred on the film and separating from the growth substrate; (5) transferring the film adhered with two-dimensional material to target substrate by sticking the side of the film with the metal chalcogenide compound on the target substrate by using tweezers, covering with a clean silicon wafer, lightly pressing to promote the adhesion of the target substrate and the film, then placing the target substrate on the glass slide, heating at 60-80degrees Celsius for 5-10 minutes, and lightly pressing to further promote the adhesion of the film to the target substrate; and (6) removing the film by removing the silicon wafer pressed on the target substrate, soaking the target substrate in deionized water for 10-30 minutes to remove the film on the surface of the metal chalcogenide compound, then applying a hot blower to the target substrate or lightly blowing the surface with a nitrogen gun to remove water droplets on the surface of the target substrate. An INDEPENDENT CLAIM is included for rapid manufacture of homo/heterojunction, which involves (A) determining the structural sequence of the heterojunction, preparing an upper structure of the heterojunction using the two-dimensional transition metal chalcogenide compound, and separating from the growth substrate, (B) sticking the separated polyvinyl alcohol film with two-dimensional transition metal chalcogenide compound on the two-dimensional material of the heterojunction substructure, covering with silicon wafer, placing on the heating table, and heating for 60-80degrees Celsius for 5-10 minutes to promote the adhesion of the metal chalcogenide compound of the upper structure and the two-dimensional material of the lower structure, and (C) cooling to room temperature, soaking in deionized water for 10-20 minutes to remove the film, and gently blowing the obtained laminate with a nitrogen gun to remove water droplets on the surface to complete heterojunction. The two-dimensional material is a two-dimensional material different from the two-dimensional transition metal chalcogenide compound.