• 专利标题:   Graphene-based FET chiral sensor, has substrate provided with channel layer that is formed with functionalized graphene film, where graphene film is provided with source and drain electrodes, and sensor provided with gate electrode.
  • 专利号:   CN205844250-U
  • 发明人:   LIN B
  • 专利权人:   WUXI YINGGUANG SEMICONDUCTOR TECHNOLOGY
  • 国际专利分类:   G01N027/327
  • 专利详细信息:   CN205844250-U 28 Dec 2016 G01N-027/327 201705 Pages: 5 Chinese
  • 申请详细信息:   CN205844250-U CN20705755 06 Jul 2016
  • 优先权号:   CN20705755

▎ 摘  要

NOVELTY - The utility model claims a graphene-based field effect transistor chiral sensor, wherein the chiral sensor comprises a substrate, the substrate is provided with a channel layer, the channel layer is a functionalized graphene film, the functionalized graphene film middle part modified with chiral recognition molecule to form a chiral identification layer; two ends of the functionalized graphene film provided with a source electrode and a drain electrode, the sensor further comprising a liquid gate electrode. The sensor of the utility model can quickly, accurately and sensitively detect the chiral compound, and can real time, continuity is detected. overcomes the traditional detecting technology high instrument cost and long analyzing time, difficult to continuous monitoring.