▎ 摘　　要

NOVELTY - Quantum dot light-emitting diode comprises anode, cathode, quantum dot light-emitting layer arranged between the anode and cathode, electron transport layer provided between cathode and quantum dot light emitting layer, and interface modification layer disposed between electron transport layer and quantum dot light-emitting layer. The interface modification layer comprises MrGO-AD composite nano-sheet. The composite nano-sheet comprises graphene nano-sheet, MXene nano-sheet and 1-amino-pyrene-disuccinic acid diester molecule. The Mxene nano-sheet is arranged between two adjacent graphene nano-sheets. The two adjacent graphene nano-sheets are crosslinked by 1-aminopropyl-disucinic acid dieter molecules. MXene is titanium carbide. USE - Quantum dot light-emitting diode (LED) used in organic organic carrier transport layer mixed structure. Can also be used in next generation display and illumination field. ADVANTAGE - The quantum dot light emitting diode has high light emitting efficiency and improved interface resistance, and reduces the whole impedance of the device, reduces the starting voltage, promotes the charge transmission in the device and improves the luminous efficiency of device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of quantum dot light-emitting diode.