• 专利标题:   Graphene grid layer transmission type gallium arsenide photoelectric cathode comprises Corning 7056 glass arranged to sealed vacuum cavity, tubular ceramic cavity, where contact surface of Corning 7056 glass and cavity with metal.
  • 专利号:   CN112349564-A
  • 发明人:   FU R, DUAN C
  • 专利权人:   UNIV NANJING SCI TECHNOLOGY
  • 国际专利分类:   H01J001/34, H01J040/06
  • 专利详细信息:   CN112349564-A 09 Feb 2021 H01J-001/34 202126 Pages: 7 Chinese
  • 申请详细信息:   CN112349564-A CN11103548 15 Oct 2020
  • 优先权号:   CN11103548

▎ 摘  要

NOVELTY - Graphene grid layer transmission type gallium arsenide photoelectric cathode comprises a Corning 7056 glass (7) arranged from up to down to form a sealed vacuum cavity, tubular ceramic cavity (10) and an anode portion (11), where the contact surface of the Corning 7056 glass and the tubular ceramic cavity is provided with an annular kovar metal (9). The tubular ceramic cavity is provided with a transmissive photoelectric cathode inner core. The inner core comprises a silicon nitride anti-reflection layer (1), gallium aluminum arsenide buffer layer (2), gallium arsenide emitting layer (3), cesium-Oactivation layer (4), and a suspension graphene gate layer (5). The indium sealing filler (8) is filled between the Corning 7056 # glass and the kovar metal to connect the photoelectric cathode inner core and the kovar metal. USE - Graphene grid layer transmission type gallium arsenide photoelectric cathode. ADVANTAGE - The cathode has better electric performance, high quantum efficiency and prolonged service life, and enhances structure stability. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene grid layer transmission type gallium arsenide photoelectric cathode. Silicon nitride anti-reflection layer (1) Gallium aluminum arsenide buffer layer (2) Gallium arsenide emitting layer (3) Cesium-Oactivation layer (4) Suspension graphene gate layer (5) Corning 7056 glass (7) Indium sealing filler (8) Annular kovar metal (9) Tubular ceramic cavity (10) Anode portion (11)