▎ 摘　　要

NOVELTY - The device has a substrate in which catalyst layer (13) is provided on an upper surface and both sides in the length direction. A graphene layer (14) is formed in contact with the catalyst layer. The graphene layer has several graphenes which are laminated vertically. A contact plug (3) is connected to a wiring (10). The width of the graphene layer on both sides of the substrate is larger than the width of the wiring. The center portion of the substrate is provided with an insulator. The contact plug is connected to each of the edge portion of the graphene layer. USE - Semiconductor device. ADVANTAGE - The contact area of the graphene layer can be increased, so that the resistance of the graphene wiring can be reduced and the contact resistance of the contact plug can be reduced. The formation temperature of the graphene can be reduced, so that the bad influence by the high-temperature process to each element of the semiconductor device can be restrained. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the semiconductor device. (Drawing includes non-English language text) Contact plug (3) Wiring (10) Base layer (12) Catalyst layer (13) Graphene layer (14)