▎ 摘　　要

NOVELTY - Gallium nitride-based film of graphene-modified patterned metal substrate, comprises a patterned metal substrate (1), a catalytic metal layer (2), a graphene layer (3), aluminum-gallium-indium-nitrogen complex buffer layer (4) and aluminum-gallium-indium-nitrogen complex epitaxial layer (5). The patterned metal substrate is a single layer metal substrate or multi-layered metal plate/foil composite metal substrate. The thickness of the patterned metal substrate is 0.01-3 mm. The thickness of the catalytic metal layer is 50-300 nm. The thickness of the graphene layer is 0.335-3.35 mm. USE - Used as a gallium nitride-based film of graphene-modified patterned metal substrate. ADVANTAGE - The substrate is suitable as a template substrate for gallium nitride-based device. DETAILED DESCRIPTION - Gallium nitride-based film of graphene-modified patterned metal substrate, comprises a patterned metal substrate, a catalytic metal layer, a graphene layer, aluminum-gallium-indium-nitrogen complex buffer layer and aluminum-gallium-indium-nitrogen complex epitaxial layer. The patterned metal substrate is a single layer metal substrate or multi-layered metal plate/foil composite metal substrate. The thickness of the patterned metal substrate is 0.01-3 mm. The thickness of the catalytic metal layer is 50-300 nm. The thickness of the graphene layer is 0.335-3.35 mm. The thickness of the buffer layer is 10-200 nm. The thickness of the epitaxial layer is 0.5-3 mu m. An INDEPENDENT CLAIM is also included for preparing gallium nitride-based film of graphene-modified patterned metal, comprising preparing catalytic metal layer by magnetron sputtering method including carrying out physical and chemical cleaning of patterned metal substrate, then drying, arranging in a magnetron sputtering device, heating at 100-500 degrees C with a pressure of 1x 10-4 to 5x 10-4 Pa by passing argon (40-200 sccm) into the magnetic control sputtering coating chamber, maintaining radio frequency sputtering power supply of 30-200 W, carrying out hydrogen plasma cleaning of catalytic metal layer, the patterned metal substrate is deposition with catalytic metal layer, placing in the sample chamber of ECR-PEMOCVD device, then the material transmitting table in the vacuum reaction chamber from the sample chamber, when the background pressure of the vacuum reaction chamber to 5x 10-4 to 1x 10-5 Pa, the material platform temperature is heating to 400-950 degrees C, passing hydrogen into the quartz glass discharge chamber through discharge gas supplying pipeline with hydrogen flow of 50-200 sccm, gas pressure control in vacuum reaction chamber is 0.1-5 Pa, setting the microwave power supply power is 300-1000 W, opening the microwave power discharge, carrying out hydrogen plasma cleaning catalytic metal layer for 1-40 minutes, the material platform heating temperature is 400-950 degrees C, passing a mixed gas of methane, hydrogen and argon into the quartz glass discharge chamber through discharge gas supply pipeline, where the methane flow is 40-100 sccm, the hydrogen flow rate is 20-100 sccm, the argon flow rate is 0-100 sccm, a gas pressure control in vacuum reaction chamber is 0.1-5 Pa, setting the microwave power supply power to 300-1000 W, closing the microwave power supply and each path of gas at 400 degrees C, the thickness of graphene layer is controlled to 0.335-3.35 nm, heating from room temperature to 400 degrees C, passing nitrogen mixed gas into the quartz glass discharge chamber through discharge gas supply pipeline, where the nitrogen flow quantity is 0-150 sccm, ammonia flow rate of 0-150 sccm, a gas pressure control in vacuum reaction chamber of 0.1-5 Pa, the microwave source power is set to 300-1000 W, starting the microwave power discharge, setting the microwave power supply power to 300-1000 W, opening the microwave power, passing metal organic source into the vacuum reaction chamber through gas phase metal organic gas supplying pipeline, start using the ECR-PEMOCVD method on the nitride graphene, preparing buffer layer, and the material table temperature achieves 300-800 degrees C. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the gallium nitride-based film of graphene-modified patterned metal substrate. Patterned metal substrate (1) Catalytic metal layer (2) Graphene layer (3) Aluminum-gallium-indium-nitrogen complex buffer layer (4) Aluminum-gallium-indium-nitrogen complex epitaxial layer (5)