▎ 摘　　要

NOVELTY - Method for promoting secondary growth of graphene involves using a confinement space formed by metal as growth substrate graphene annealing, etching an outer surface of a confinement space after the first growth graphene is finished, and performing second growth graphene to promote the inner surface of the confinement space to grow double-layer graphene. The metal is chosen from copper or nickel. The annealing atmosphere is argon gas and hydrogen. USE - The method is useful for promoting secondary growth of graphene and application in preparing double-layer graphene used in graphene-based electronic device and can also be used in semiconductor device. ADVANTAGE - The method obtains double-layer graphene in the relatively stable confinement space, and obtains the high quality, high coverage of double layer graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of double-layer graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flow diagram of the method for promoting the secondary growth of graphene (Drawing includes non-English language text).