▎ 摘　　要

NOVELTY - The method involves taking a silicon dioxide/silicon wafer as a bearing substrate of graphene, and depositing the graphene on the substrate. A titanium/gold detecting electrode is prepared on a surface of the graphene. A strain sheet structure is made as a reference electrode on the surface of the substrate. A silicon dioxide silicon sheet with the detection electrode and the reference electrode is adhered to a middle portion of a rectangular beam upper end. A universal meter is utilized for detecting change of a graphene resistance and a resistance change of the reference electrode. USE - Method for detecting graphene piezoresistive factor. ADVANTAGE - The method enables detecting the graphene piezoresistive factor with high accuracy.