• 专利标题:   Preparing ultra-thin two-dimensional nickel phosphide nanosheet material involves using solvothermal method, and dispersing synthesized ultra-thin nickel hydroxide precursor on functionalized single-layer graphene by self-assembly method.
  • 专利号:   CN108855160-A
  • 发明人:   XU Y, LI S, TANG Z
  • 专利权人:   UNIV FUZHOU
  • 国际专利分类:   B01J027/185, B01J035/00, B01J035/02, C01B003/04
  • 专利详细信息:   CN108855160-A 23 Nov 2018 B01J-027/185 201908 Pages: 9 Chinese
  • 申请详细信息:   CN108855160-A CN10736210 06 Jul 2018
  • 优先权号:   CN10736210

▎ 摘  要

NOVELTY - Preparing ultra-thin two-dimensional nickel phosphide nanosheet material involves using solvothermal method, and dispersing synthesized ultra-thin nickel hydroxide precursor on functionalized single-layer graphene by electrostatic self-assembly method, and finally synthesizing ultra-thin two-dimensional nickel phosphide nanomaterial by using gas-solidphase phosphoridation. USE - Method for preparing ultra-thin two-dimensional nickel phosphide nanosheet material in eosin-sensitized photolysis hydrogen production (claimed). ADVANTAGE - The method enables to prepare ultra-thin two-dimensional nickel phosphide nanosheet material which has important practical application value and beneficial for sustainable development of environment and energy.