▎ 摘　　要

NOVELTY - The gallium nitride material structure comprises a substrate layer (1), a nucleation layer (12), a transition layer (13), a buffer layer (2), a channel layer (3), a composite barrier layer (4) and a metal electrode on the barrier layer. The back surface of the substrate layer is provided with multiple through holes. The inner wall and the bottom of the through hole are provided with an interconnection metal layer (100). A high thermal conductivity material (11) is also deposited in the through hole. USE - The gallium nitride material structure with back through hole enhanced heat dissipation for third-generation wide-bandgap semiconductor materials. ADVANTAGE - The gallium nitride material structure with back through hole enhanced heat dissipation adopts the structure of depositing high thermal conductivity material in the back through hole, which not only expands the heat transfer surface area between the high thermal conductivity material layer and the substrate, but also enhances the substrate heat dissipation through the material, reduces the high thermal resistance of the device, thus improving the heat dissipation performance of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the gallium nitride material structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the gallium nitride material structure with back through holes for enhanced heat dissipation. Substrate layer (1) Buffer layer (2) Channel layer (3) Composite barrier layer (4) High thermal conductivity material (11) Nucleation layer (12) Transition layer (13) Interconnection metal layer (100)