▎ 摘　　要

NOVELTY - The modulator has a substrate comprising a dual-layer graphene vertical slit optical waveguide structure, a first electrode, a second electrode, a light input end and a light output end. The dual-layer graphene vertical slit optical waveguide structure comprises a first high-refractive index material layer and a low-refractive index material layer. A second high-refractive index material layer is formed with a vertical slit optical waveguide, a first graphene layer, an insulating material layer and a second graphene layer. The first electrode is formed on an extending end of the first graphene layer. The second electrode is formed on an extending end of the second graphene layer. The high-refractive index material layers are made of gallium arsenide, germanium, silicon and silicon nitride. The low-refractive index material layer is made of silicon dioxide, boron nitride and silicon nitride. USE - Graphene electro-optic modulator. ADVANTAGE - The modulator can increase distribution of mode field of a TE mode in a slit region and carrier migration speed, improve modulation efficiency of the modulator and adjust high-response rate of the modulator in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene electro-optic modulator manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene electro-optic modulator.