▎ 摘　　要

NOVELTY - A semiconductor device (600) comprises a silicon base layer (603); a first dielectric layer (602) on the silicon base layer; a graphene layer (601) on the dielectric layer; and one of a metal and a semiconductor layer on the graphene layer. The metal and semiconductor layer acts as a nucleation layer for the graphene layer. USE - As semiconductor device (claimed). ADVANTAGE - By first depositing metal or semiconductor layer onto graphene, a uniformly thin dielectric layer, such as Al2O3, is capable of being formed onto graphene without affecting the underlying characteristics of graphene. The presence of metal or semiconductor allows a large number of nuclei across the surface of graphene thus ensuring a uniform dielectric layer. As a result of subjecting metal or semiconductor to an oxidation process, a uniformly thin dielectric layer is formed without disturbing the properties or characteristics of graphene (e.g. sp2-bonded carbon atoms). DETAILED DESCRIPTION - A semiconductor device (600) comprises a silicon base layer (603); a first dielectric layer (602) on the silicon base layer; a graphene layer (601) on the dielectric layer; and one of a metal and a semiconductor layer on the graphene layer. The metal and semiconductor layer acts as a nucleation layer for the graphene layer. The metal and semiconductor layer on the graphene layer is oxidized. The device further comprises a second dielectric layer (605) which is deposited on one of the oxidized metal and the oxidized semiconductor layer, where one of the oxidized metal and the oxidized semiconductor layer acts as the nucleation layer for the graphene layer. The second dielectric layer is deposited by using atomic layer deposition, chemical vapor deposition, and physical vapor deposition. One of the metal and semiconductor layer is deposited on the graphene layer via physical vapor deposition. An INDEPENDENT CLAIM is included for forming a uniformly thin dielectric layer on graphene involving transferring graphene onto a surface of one of a first dielectric layer and a substrate; depositing a layer of one of a metal and a semiconductor on the graphene; subjecting the layer of one of the metal and semiconductor to an oxidation process; introducing a metal precursor after subjecting the layer of one of the metal and the semiconductor to the oxidation process; and forming a second dielectric layer on the graphene by oxidizing the metal precursor. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a semiconductor device during device fabrication. Semiconductor device (600) Graphene (601) Dielectric layer (602) Silicon base layer (603) Thin dielectric layer (605)