• 专利标题:   Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.
  • 专利号:   CN108878265-A
  • 发明人:   YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01L021/02, C30B025/18, C30B029/40
  • 专利详细信息:   CN108878265-A 23 Nov 2018 H01L-021/02 201907 Pages: 7 Chinese
  • 申请详细信息:   CN108878265-A CN10714565 03 Jul 2018
  • 优先权号:   CN10714565

▎ 摘  要

NOVELTY - Single crystal gallium nitride film growing involves forming an amorphous silicon oxide layer on a silicon substrate (100), transferring the single crystal graphene to the obtained silicon substrate, and then pretreating the single crystal graphene surface to produce surface dangling bonds. An aluminum nitride nucleation layer is grown on the pretreated single crystal graphene. A gallium nitride single crystal thin film is epitaxially grown on the aluminum nitride nucleation layer. USE - Method for growing single crystal gallium nitride film on silicon substrate. ADVANTAGE - The method grows the single crystal gallium nitride film in a simple, cost-effective and eco-friendly manner with uniform high-quality, and good foundation for integration of gallium nitride-based devices and silicon-based devices. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flowchart of the method for growing single crystal gallium nitride film on silicon substrate. (Drawing includes non-English language text).