▎ 摘　　要

NOVELTY - Single crystal gallium nitride film growing involves forming an amorphous silicon oxide layer on a silicon substrate (100), transferring the single crystal graphene to the obtained silicon substrate, and then pretreating the single crystal graphene surface to produce surface dangling bonds. An aluminum nitride nucleation layer is grown on the pretreated single crystal graphene. A gallium nitride single crystal thin film is epitaxially grown on the aluminum nitride nucleation layer. USE - Method for growing single crystal gallium nitride film on silicon substrate. ADVANTAGE - The method grows the single crystal gallium nitride film in a simple, cost-effective and eco-friendly manner with uniform high-quality, and good foundation for integration of gallium nitride-based devices and silicon-based devices. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flowchart of the method for growing single crystal gallium nitride film on silicon substrate. (Drawing includes non-English language text).