• 专利标题:   General synthesis for in situ construction of indium oxide-modified zinc oxide-zinc sulfide heterostructure, comprises e.g. evenly dropwise adding indium nitrate solution to reduced graphene oxide-wrapped zinc powder dispersion under continuous stirring; washing and drying.
  • 专利号:   CN115582113-A
  • 发明人:   ZHANG R, LIANG S, WANG X
  • 专利权人:   UNIV NANCHANG
  • 国际专利分类:   B01J023/08, B01J027/04, B01J035/00, B01J037/20, B01J037/34, C01B003/04
  • 专利详细信息:   CN115582113-A 10 Jan 2023 B01J-023/08 202317 Chinese
  • 申请详细信息:   CN115582113-A CN11169897 23 Sep 2022
  • 优先权号:   CN11169897

▎ 摘  要

NOVELTY - General synthesis for in situ construction of indium oxide-modified zinc oxide-zinc sulfide heterostructure, comprises evenly dropwise adding indium nitrate solution to reduced graphene oxide (rGO)-wrapped zinc powder dispersion under continuous stirring; during continuous stirring, free In3+ in solution gradually turns into indium particles and is anchored on surface of zinc powder, forming micro-battery system with zinczinc oxide as the anode and indiumwaterH2 as cathode; where, rGO actively promotes electron transport and transfer in the micro-battery reaction system; indium metal particles will also undergo self-oxidation to generate indium(III) oxide during the micro-battery reaction; after finishing reaction, washing and drying to obtain the indium(III) oxide-zinc oxide/rGO primary product; selecting the indium(III) oxide-zinc oxide/rGO primary product prepared by thioacetamide solution and sulfidation microelectrochemical process, to prepare heterostructure photocatalyst. USE - The heterostructures is useful for photocatalytic hydrogen production from water splitting (claimed). ADVANTAGE - The heterostructures: has high specific surface area, smooth carrier migration, active carrier separation and utilization efficiency, thus improving the photocatalytic hydrogen production activity.