▎ 摘　　要

NOVELTY - The method involves transferring graphene doped in an upper portion of an electrode and an exposed p-type silicon substrate. A crystalline n-type silicon substrate is prepared to induce a graphene-silicone PN junction. A specific area of the crystalline n-type silicon substrate is exposed. An insulating layer is etched. An electrode pattern is formed by utilizing a mask pattern. The insulating layer is formed on the mask pattern. An electrode material pattern is formed on the electrode through a thermal evaporation process. USE - Method for manufacturing a silicone-graphene heterojunction solar cell utilized in a spotlight. ADVANTAGE - The method enables transferring the graphene doped in the upper portion of the electrode and the exposed p-type silicon substrate, and preparing the crystalline n-type silicon substrate to induce the graphene-silicone PN junction so as to facilitate smooth manufacturing of the silicone-graphene heterojunction solar cell and improve electric mobility, semi-metal property, economic benefits and photoelectric conversion efficiency of the silicone-graphene heterojunction solar cell. DETAILED DESCRIPTION - The electrode material pattern comprises electrode material that is aluminum, platinum, gold, copper or silver material. The graphene is molybdenum trioxide, molybdenum dioxide, tungsten oxide, vanadium oxide, nickel oxide, hexaazatriphenylene hexacarbonitrile or tetra-fluoro-tetra-cyano-quinodimethane. An INDEPENDENT CLAIM is also included for as for a silicone-graphene heterojunction solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a silicone-graphene heterojunction solar cell.