▎ 摘　　要

NOVELTY - Producing pellicle structure comprises either: (a) forming a lower protective layer on the entire surface of the substrate, (b) forming an amorphous thin film including amorphous carbon, amorphous silicon, or amorphous boron nitride on the lower protective layer, (c) forming a metal thin film on the amorphous thin film, (d) crystallizing the amorphous thin film into a crystalline thin film by performing a rapid thermal process (RTP), (e) removing the metal thin film after the crystallization, (f) forming an upper protective layer on the crystalline thin film, and (g) exposing a portion of the lower protective layer by etching a portion of the back surface of the substrate; or e.g. (a1) forming a metal thin film on the entire surface of the substrate, (b1) forming an amorphous thin film comprising amorphous carbon, amorphous silicon, or amorphous boron nitride on the metal thin film, and (c1) crystallizing the amorphous thin film into a crystalline thin film by performing RTP. USE - The pellicle structure is useful for protecting photomask in semiconductor integrated circuits. ADVANTAGE - The method produces pellicle structure using multilayer graphene layer without separate transfer process in short period of time. The pellicle structure has excellent performance and physical properties. DETAILED DESCRIPTION - Producing pellicle structure comprises either: (a) forming a lower protective layer on the entire surface of the substrate, (b) forming an amorphous thin film including amorphous carbon, amorphous silicon, or amorphous boron nitride on the lower protective layer, (c) forming a metal thin film on the amorphous thin film, (d) crystallizing the amorphous thin film into a crystalline thin film by performing a rapid thermal process (RTP), (e) removing the metal thin film after the crystallization, (f) forming an upper protective layer on the crystalline thin film, and (g) exposing a portion of the lower protective layer by etching a portion of the back surface of the substrate; or (a1) forming a metal thin film on the entire surface of the substrate, (b1) forming an amorphous thin film comprising amorphous carbon, amorphous silicon, or amorphous boron nitride on the metal thin film, (c1) crystallizing the amorphous thin film into a crystalline thin film by performing RTP, (d1) forming an upper protective layer on the crystalline thin film, (e1) exposing a portion of the metal thin film by etching a portion of the back surface of the substrate, (f1) exposing a portion of the crystalline thin film by etching the exposed metal thin film, and (g1) forming a lower protective layer under the exposed crystalline thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for producing pellicle structure (Drawing includes non-English language text).