▎ 摘　　要

NOVELTY - The method involves arranging a gate metal electrode (4) on a flexible substrate (1) during evaporation process. A surface of the flexible substrate is adhered with a metal titanium layer and a gold-molybdenum alloy layer. A silicon dioxide medium layer (2) is deposited on the flexible substrate during plasma-enhanced chemical vapor deposition process. The gate metal electrode is embedded on the silicon dioxide medium layer. A metal electrode layer (5) is adhered on a drain metal electrode (6). Graphene suspension process is performed on the gate metal electrode to form a graphene beam (3). USE - Flexible substrate based high-frequency graphene electromechanical resonator manufacturing method for a microwave device. ADVANTAGE - The method enables increasing quality factor and shock resistance and reducing operation cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high-frequency graphene electromechanical resonator. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a high-frequency graphene electromechanical resonator. Flexible substrate (1) Silicon dioxide medium layer (2) Graphene beam (3) Gate metal electrode (4) Metal electrode layer (5) Drain metal electrode (6)