▎ 摘　　要

NOVELTY - Magnetization turning device based on track transfer moment comprises substrate, insulating dielectric layer, source/drain electrode, measuring electrode, heterojunction, top gate and back gate. An insulating medium layer is formed on the front surface of the substrate and a back gate on the back surface of a substrate. The source and drain electrodes and a pair of measuring electrodes on the insulating matrix layer. A two-dimensional layered second order nonlinear Hall effect layer uses two-dimensional layered material with second-order nonlinear Hall effect. A voltage meter is through the measuring electrode to obtain heterojunction Hall resistance to obtain the magnetization state of the vertical magnetic anisotropy free ferromagnetic layer. The polarization direction of track magnetic moment is reverse to realize the reverse track transfer moment. The magnetization of vertical magnetic anisotropy free ferromagnetic layer is reversed. USE - The magnetization turning device is useful in coagulation state physical spin electronics field, hard disk head, magnetic random access memory, spin field emission transistor and spin light emitting diode. ADVANTAGE - The device: has high efficiency and speed turning effect; does not need external magnetic field auxiliary or complex asymmetric structure design; ensure the spin track moment and read-write path separation; and reduce the power consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a realizing method of magnetization turning device based on track transfer moment. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the magnetization turning device based on track transfer moment.