• 专利标题:   Preparing carbon nano tube/graphene nano-band heterojunction photoelectric device involves coating single-wall carbon nano-tube dispersion liquid on FTO conductive glass, drying, calcining, depositing titanium dioxide and transition metal.
  • 专利号:   CN113675346-A
  • 发明人:   HE Z, LI X, HU B, WANG K, CHEN C, ZHOU Q
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   H01L051/46, H01L051/42, H01L051/48
  • 专利详细信息:   CN113675346-A 19 Nov 2021 H01L-051/48 202201 Chinese
  • 申请详细信息:   CN113675346-A CN10965956 23 Aug 2021
  • 优先权号:   CN10965956

▎ 摘  要

NOVELTY - Preparing carbon nanotube/graphene nano-band heterojunction photoelectric device comprises (i) coating a single-wall carbon nanofiber dispersion liquid on an FTO conductive glass and drying, (ii) calcining, (iii) sequentially depositing titanium dioxide and transition metal on the single-walled carbon nanometre, (iv) performing single-clustered carbon nanometer melting under the assistance of hydrogen to obtain a graphene nano-belt/single-thick carbon nanomechanical intramolecular heterojunctions layer, and (v) depositing an indium tin oxide transparent electrode on the obtained graphene nanometal/single wall carbon nanomaterial intramolcular homojunction layer to obtain the carbon nano-tube/Graphene nanofibril/ single-thistrahydro-butyllium-tetraacetic acid photodetrolytic device. USE - The method used for preparing carbon nano tube/graphene nano-belt heterojunction photoelectric device, which is useful in electronic device. ADVANTAGE - The method can effectively control the melting degree of the single-wall carbon nano-tube, and can form a set of single wall carbon nano tube/graphene nano-band intramolecular heterojunction on a single wall. It can effectively improve the photo-generated current and photo generated voltage of the photoelectric device. Therefore, the sensitivity of the device can be greatly improved.