• 专利标题:   -Aluminum doped copper sulfide/graphene composite film comprises copper sulfide/rGO composite film formed by co-deposition of copper sulfide, rGO and aluminum ion, where copper sulfide is crystal grain, rGO is reduced graphene.
  • 专利号:   CN107365981-A
  • 发明人:   HE H, HE Z, SHEN Q
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   C23C018/12
  • 专利详细信息:   CN107365981-A 21 Nov 2017 C23C-018/12 201803 Pages: 10 Chinese
  • 申请详细信息:   CN107365981-A CN10686119 11 Aug 2017
  • 优先权号:   CN10686119

▎ 摘  要

NOVELTY - Aluminum doped copper sulfide/graphene composite film comprises copper sulfide/rGO composite film formed by co-deposition of copper sulfide, rGO and aluminum ion, where copper sulfide is crystal grain, rGO is a reduced graphene, aluminum ion doped with 0.1-9% of rGO/copper sulfide, molar ratio of sulfur/copper is less than or equal to 1, and 0.1-6.55% aluminum doped amount of copper. USE - Aluminum doped copper sulfide/graphene composite film. ADVANTAGE - The aluminum doped copper sulfide/graphene composite film has good light absorbing performance, and has excellent conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing aluminum doped copper sulfide/graphene composite film, which involves: (A) preparing copper containing precursor solution by doping aluminum ion in certain molar ratio such that amount of aluminum ion doping is 2-4% of that of copper ion and 1-2 times the molar amount of the graphene reducing agent and copper ions citric acid, adding graphene solution before mixing, where mass ratio of rGO/copper sulfide is 2-8%, preparing sulfur precursor solution by using thioacetamide aqueous solution with sulfur/copper in molar ratio of 1-1.1; (B) placing prepared glass substrate vertically into reaction vessel, adding precursor solution into reaction vessel, depositing mixed reaction on the glass substrate deposition film, removing the glass substrate and rinsing, to completing deposition, and repeatedly depositing on the glass substrate for multiple times; and (C) depositing film at 80-100 degrees C, drying for 1-2 hour;s or at power of 25 -40 Watt, irradiating for 2-3 hours by using ultra violet lamp to obtain final product.