▎ 摘　　要

NOVELTY - Forming graphene layer between seed metal layer and third dielectric layer involves forming a first contact feature in first dielectric layer over workpiece, forming a second dielectric layer over the first contact feature and first dielectric layer, forming a via opening in the second dielectric layer to expose portion of the first contact feature, depositing a seed metal layer in the via opening and over the second dielectric layer, and patterning the seed metal layer to expose a portion of the second dielectric layer. The third dielectric layer is deposited over the exposed portion of the second dielectric layer, deposited a carbon layer over the seed metal layer and the third dielectric layer, annealed the workpiece to form a graphene layer between the seed metal layer and the third dielectric layer. USE - Method for forming graphene layer between seed metal layer and third dielectric layer used in integrated circuit (IC) devices, e.g. transistors. ADVANTAGE - The method enables utilizing a scaling down process to increase production efficiency and reduce associated costs, allows a dielectric layer to be formed on a top surface of the interconnect structure to reduce or eliminate the contact resistance between the first and second conductive layers, thus improving performance of the integrated circuit (IC) device and improving yield and reliability of the IC device, and hence improving performance and yield of the semiconductor device efficiently.