▎ 摘　　要

NOVELTY - The structure (503) has graphene-lattice matching material placed over a portion of graphene material. The graphene-lattice matching material comprises a unit cell vector in alignment with a lattice vector of the graphene material or with graphene bond of the graphene material, where the semiconductor structure comprises energy band gap of about 0.5 electron volts and magnitude of the unit cell vector of the graphene-lattice matching material is multiple of the lattice vector of the graphene material and multiple of the graphene bond of the graphene material. USE - Graphene structure for a semiconductor device (claimed) i.e. FET device. ADVANTAGE - The structure facilitates magnitude of the vectors to govern proper crystalline alignment between the graphene material and the graphene-lattice matching material. The structure selects the graphene-lattice matching material to achieve crystalline alignment between the graphene and the graphene-lattice matching material. The structure utilizes semiconducting graphene material including more than three monolayers of graphene-lattice matching material to prevent undesirable leakage problem that can cause direct tunneling. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for modifying an energy band gap of graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a semiconductor device in cross section. Semiconductor device (500) Source (501) Drain (502) Semiconducting graphene structure (503) Gate structure (504) Gate dielectric material (505) Substrate (510)