▎ 摘　　要

NOVELTY - The device has a conductivity type semiconductor layer prepared on a board layer. An active layer is prepared on the conductivity type semiconductor layer. Another conductivity type semiconductor layer is prepared on the active layer. A graphene layer is prepared on the latter conductivity type semiconductor layer. The graphene layer is made of a graphene sheet, a graphene nano mesh and nano ribbon. Multiple holes are formed in the graphene layer. USE - Light emitting device. ADVANTAGE - The device has better surface plasmon effect, improves internal quantum efficiency, and prevents crystal defect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a light emitting device.