• 专利标题:   Photodetector for use as light-receiving device, has second graphene layer that is set on 2D material layer, and first electrode that is set on first graphene layer, and second electrode that is set on second graphene layer.
  • 专利号:   US2017117430-A1, KR2017046386-A, US9806218-B2
  • 发明人:   HEO J, PARK S, LEE K, LEE S, LEE E, LEE J, HEO J S, PARK S J, LEE K Y, LEE S Y, LEE E K, LEE J H
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L031/028, H01L031/032, H01L031/0336, H01L031/0392, H01L031/109, H01L031/18, H01L031/0216, H01L031/09, H01L031/10, H01L029/16, H01L029/267, H01L029/66, H01L031/0232, H01L031/105, H01L031/107
  • 专利详细信息:   US2017117430-A1 27 Apr 2017 H01L-031/109 201730 Pages: 23 English
  • 申请详细信息:   US2017117430-A1 US085100 30 Mar 2016
  • 优先权号:   KR146663

▎ 摘  要

NOVELTY - The photodetector (100) has a two-dimensional (2D) material layer (145) on the first graphene layer, the 2D material layer including a light absorption layer (150) and a barrier layer (140) having a larger bandgap than the light absorption layer. A second graphene layer (130) is set on the 2D material layer. A first electrode (170) is set on the first graphene layer. A second electrode (180) is set on the second graphene layer. USE - Photodetector for use as light-receiving device in optical communication network, and precise measuring system. ADVANTAGE - The barrier layer having the larger bandgap energy than the light absorption layer may prevent or reduce a flow of a dark current that may be generated even if there is no light. The doping process enables a reduction in a sheet resistance without a decrease in transmittancy of the first graphene layer. The optical characteristic of the first graphene layer is secured, and an electric characteristic resistance is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photodetector. Photodetector (100) Second graphene layer (130) Barrier layer (140) Material layer (145) Light absorption layer (150) First electrode (170) Second electrode (180)