▎ 摘　　要

NOVELTY - The transistor (11) has gate electrode (15), source electrode (16), and drain electrode (17) that is arranged apart from source electrode. An insulating base is provided with a first surface (12a) and a graphene film (13) arranged on the first surface. The gate electrode is provided with a first layer (21) which is arranged in contact with gate insulating film (14) and which is composed of aluminum and oxygen, and a second layer (22) which is arranged on first layer and whose length in gate length direction is longer than length in gate length direction of gate insulating film. The content ratio of oxygen included in end portion in the gate length direction of the first layer is larger than the content ratio of oxygen contained in the center portion of the first layer in the gate length direction. USE - Transistor such as MOSFET, Metal-semiconductor FET, and Metal Insulator FET. ADVANTAGE - The production efficiency of the transistor is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the transistor. Transistor (11) First surface (12a) Graphene film (13) Gate insulating film (14) Gate electrode (15) Source electrode (16) Drain electrode (17) Gate electrode layers (21, 22)