▎ 摘　　要

NOVELTY - Device comprises a conductive feature (204) partially disposed within a dielectric layer (202), a via electrically connected to the conductive feature, a graphene layer disposed directly on the conductive feature, and a seed layer (206) extending from the graphene layer to the via such that the seed layer interfaces with both the graphene layer and the via. USE - Device, preferably semiconductor device. ADVANTAGE - The device has high contact resistance between the via and metal conductors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method, which involves: a. forming a trench within a dielectric layer to expose a conductive feature; b. forming seed layer within the trench; c. forming a carbon layer within the trench on the seed layer; and d. performing a treatment process to cause a graphene layer to form between the seed layer and the conductive feature. DESCRIPTION OF DRAWING(S) - The drawing shows a process for forming graphene layer between via and conductive feature. Dielectric layer (202) Conductive feature (204) Pre-fill layer (205) Seed layer (206) Carbon deposition process (212)